Nanoscale patterning of graphene through femtosecond laser ablation
- Electrical and Computer Engineering, The George Washington University, Washington, DC 20052 (United States)
We report on nanometer-scale patterning of single layer graphene on SiO{sub 2}/Si substrate through femtosecond laser ablation. The pulse fluence is adjusted around the single-pulse ablation threshold of graphene. It is shown that, even though both SiO{sub 2} and Si have more absorption in the linear regime compared to graphene, the substrate can be kept intact during the process. This is achieved by scanning the sample under laser illumination at speeds yielding a few numbers of overlapping pulses at a certain point, thereby effectively shielding the substrate. By adjusting laser fluence and translation speed, 400 nm wide ablation channels could be achieved over 100 μm length. Raster scanning of the sample yields well-ordered periodic structures, provided that sufficient gap is left between channels. Nanoscale patterning of graphene without substrate damage is verified with Scanning Electron Microscope and Raman studies.
- OSTI ID:
- 22283215
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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