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Title: On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.
Authors:
; ; ; ; ; ; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  2. (Turkey)
Publication Date:
OSTI Identifier:
22283108
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; CHANNELING; DEPLETION LAYER; EFFICIENCY; ELECTRIC FIELDS; ELECTRON CAPTURE; ELECTRONS; GALLIUM NITRIDES; HETEROJUNCTIONS; HOLES; LIGHT EMITTING DIODES; MEAN FREE PATH; N-TYPE CONDUCTORS; POLARIZATION; QUANTUM WELLS; RECOMBINATION