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Title: Creation of deep blue light emitting nitrogen-vacancy center in nanosized diamond

This paper reports on the formation of complex defect centers related to the N3 center in nanosized diamond by employing plasma immersion and focused ion beam implantation methods. He{sup +} ion implantation into nanosized diamond “layer” was performed with the aim of creating carbon atom vacancies in the diamond structure, followed by the introduction of molecular N{sub 2}{sup +} ion and heat treatment in vacuum at 750 °C to initiate vacancy diffusion. To decrease the sp{sup 2} carbon content of nanosized diamond formed during the implantation processes, a further heat treatment at 450 °C in flowing air atmosphere was used. The modification of the bonding properties after each step of defect creation was monitored by Raman scattering measurements. The fluorescence measurements of implanted and annealed nanosized diamond showed the appearance of an intensive and narrow emission band with fine structures at 2.98 eV, 2.83 eV, and 2.71 eV photon energies.
Authors:
; ; ;  [1] ;  [2]
  1. Institute for Solid State Physics and Optics, Wigner Research Center for Physics, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49 (Hungary)
  2. Uzhhorod National University, 88000 Uzhhorod (Ukraine)
Publication Date:
OSTI Identifier:
22283079
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; DIAMONDS; DIFFUSION; FINE STRUCTURE; FLUORESCENCE; HELIUM IONS; ION BEAMS; ION IMPLANTATION; MODIFICATIONS; NANOSTRUCTURES; NITROGEN; PHOTONS; RAMAN SPECTROSCOPY; VACANCIES