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Title: Coherent acoustic phonon generation in GaAs{sub 1−x}Bi{sub x}

We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs{sub 1−x}Bi{sub x}. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs{sub 1−x}Bi{sub x} layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities.
Authors:
;  [1] ; ; ;  [2]
  1. Indian Institute of Science Education and Research Thiruvananthapuram (IISER-TVM), CET Campus, Thiruvananthapuram, Kerala 695016 (India)
  2. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
22283067
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; BISMUTH; BISMUTH COMPOUNDS; DEFORMATION; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; LASER RADIATION; LAYERS; OSCILLATIONS; PHONONS; POTENTIALS; STRAINS; STRESSES; SURFACES; VALENCE