Penetration depth and absorption mechanisms of spin currents in Ir{sub 20}Mn{sub 80} and Fe{sub 50}Mn{sub 50} polycrystalline films by ferromagnetic resonance and spin pumping

Journal Article · Mon Jan 20 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862971· OSTI ID:22280584

Merodio, P.; Ghosh, A.; Lemonias, C.; Gautier, E.; Ebels, U.; Chshiev, M.

Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also occur with AFs, thus making AF-spintronics attractive. Here, room temperature critical depths and absorption mechanisms of spin currents in Ir{sub 20}Mn{sub 80} and Fe{sub 50}Mn{sub 50} are determined by F-resonance and spin pumping. In particular, we find room temperature critical depths originating from different absorption mechanisms: dephasing for Ir{sub 20}Mn{sub 80} and spin flipping for Fe{sub 50}Mn{sub 50}.

• OSTI ID: 22280584
• Journal Information: Applied Physics Letters, Vol. 104, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ANISOTROPY
ANTIFERROMAGNETIC MATERIALS
ANTIFERROMAGNETISM
ELECTRIC CURRENTS
FERROMAGNETIC RESONANCE
IRIDIUM ALLOYS
IRON ALLOYS
MAGNETIC PROPERTIES
MAGNETORESISTANCE
MANGANESE BASE ALLOYS
PENETRATION DEPTH
POLYCRYSTALS
SPIN
TEMPERATURE RANGE 0273-0400 K
THIN FILMS