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Title: Resonant spin and valley polarization in ferromagnetic silicene quantum well

We propose a silicene-based lateral resonant tunneling device by placing silicene under the modulation of top nonmagnetic/ferromagnetic/nonmagnetic sandwich nanogates. Following the electric-tunable bandgap of silicene, lateral double-barrier structure is formed by imposing the flexible electrostatic modulation on top gates. By aligning the spin and valley-resolved confined states in magnetic well, remarkable spin/valley polarization can be accessed through spinor-relying resonant tunneling mechanism. Under the electrostatic, magnetic, and size manipulation, the confined well state can be efficiently engineered, and the observed spin and valley polarization can be further flexibly tuned, offering some helpful strategies to construct spinor-electronic logic atomically.
Authors:
 [1]
  1. Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming, 650500 Yunnan (China)
Publication Date:
OSTI Identifier:
22280582
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MODULATION; POLARIZATION; QUANTUM WELLS; SILICON; SPIN; SPINORS; TUNNEL EFFECT