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Title: Strain-induced magnetism in MoS{sub 2} monolayer with defects

The strain-induced magnetism is observed in single-layer MoS{sub 2} with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2 μ{sub B} per vacancy defect. The strain-induced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS{sub 2}.
Authors:
; ; ;  [1]
  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China)
Publication Date:
OSTI Identifier:
22278163
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; ENERGY GAP; MAGNETIC MOMENTS; MAGNETISM; MOLYBDENUM SULFIDES; STRAINS; VACANCIES