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Title: Effect of boron concentration on recombination at the p-Si–Al{sub 2}O{sub 3} interface

We examine the surface passivation properties of Al{sub 2}O{sub 3} deposited on boron-doped planar 〈100〉 crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10{sup 15} to 5.2 × 10{sup 19} cm{sup −3}. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al{sub 2}O{sub 3} films. The surface recombination rate of each sample is determined from photoconductance measurements together with the measured dopant profiles via numerical simulation, using the latest physical models. These values are compared with calculations based on the interface properties determined from capacitance–voltage and conductance measurements. It is found that the fundamental surface recombination velocity of electrons, S{sub n0}, which describes the chemical passivation of the interface, is independent of the surface boron concentration N{sub s} for N{sub s} ≤ 3 × 10{sup 19} cm{sup −3}, and in excellent agreement with values calculated from the interface state density D{sub it} and capture coefficients c{sub n} and c{sub p} measured on undiffused boron-doped surfaces. We conclude that the physical properties of the Si–Al{sub 2}O{sub 3} interface are independent of the boron dopant concentration over this range.
Authors:
; ;  [1] ;  [2]
  1. Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia)
  2. PV Lighthouse, Coledale, NSW 2515 (Australia)
Publication Date:
OSTI Identifier:
22277923
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BORON; CHEMICAL VAPOR DEPOSITION; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; CRYSTAL STRUCTURE; ELECTRONS; INTERFACES; PHOTOCONDUCTIVITY; P-TYPE CONDUCTORS; RECOMBINATION; SILICON; SURFACES; THIN FILMS