Electron-beam induced variation of surface profile in amorphous As{sub 20}Se{sub 80} films
- Department of Solid State Physics, University of Debrecen, Bem sqr. 18/b, H-4026 Debrecen (Hungary)
- Institute of Semiconductor Physics, NAS of Ukraine, Kiev 03028 (Ukraine)
- Department of Experimental Physics, University of Debrecen, Bem sqr. 18/b, H-4026 Debrecen (Hungary)
Unusual profile variation of holographic surface relief gratings is detected in thin (2 μm) As{sub 20}Se{sub 80} chalcogenide films under e-beam irradiation: gratings of small periods were smoothed, whereas the gratings of larger periods increased their amplitudes. Irradiation was carried out in SEM, with 20 kV voltage and 8 nA current; the profiles of the irradiated areas were analyzed both by AFM and SEM. It is found that the kinetics of both flattening and growth followed by exponential law and took place due to lateral mass transport accelerated by e-irradiation. It is shown that the profile variation is mainly caused by competition between capillary forces and “chemical” forces induced by broken and deformed atomic bonds under e-beam irradiation. The kinetics of profile variation was calculated assuming that the mechanism of e-beam induced mass transfer is volume diffusion. The diffusion coefficients were estimated from the experimental data using theoretical expressions derived.
- OSTI ID:
- 22275824
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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