Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4861890· OSTI ID:22275802

Numata, R.; Oya, N.; Suemasu, T. ^[1]; Fukata, N. ^[2]; Usami, N. ^[3]

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1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
2. National Institute for Materials Science, Namiki, Tsukuba 305-0044 (Japan)
3. Materials, Physics and Energy Engineering, Nagoya University, Aichi 464-8603 (Japan)

The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180 °C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10 μm and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180 °C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates.

• OSTI ID: 22275802
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALLIZATION
DIFFRACTION
DIFFUSION
METALS
POLYCRYSTALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
THIN FILMS