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Title: Improved lateral photovoltaic effect of Ti and carbon films by interface modification with single-walled carbon nanotubes

An efficiently improved lateral photovoltaic effect (LPE) has been successfully observed in Ti/Si and amorphous carbon (a-C) film/Si structures by introducing single-walled carbon nanotubes (SWNTs) as modifying interface instead of native SiO{sub 2} layer grown on Si substrate. The largest lateral photovoltage (LPV) position sensitivity achieved is 67.02 mV/mm for the Ti/Si system and 2.23 mV/mm for the a-C/Si system. This corresponds to an improvement of 40% for the Ti/Si system and 2600% for the a-C/Si system. Besides, the SWNTs modified interface also induced a well-marked shift of optimal film thickness in both materials. An additional novel phenomenon is that the directly observed LPV is much larger in SWNTs/Si system compared to the improved a-C/SWNTs/Si structure. A mechanism based on the change of interface states is given to interpret these results, which not only suggests a new common modulation method for LPE, but also a new potential application of SWNTs for photo-electronic device.
Authors:
 [1] ;  [2] ;  [1]
  1. The State Key Laboratory on Fiber Optic Local Area Communication Networks and Advanced Optical Communication Systems, Department of Physics and Astronomy, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai 200240 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22275737
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; AMORPHOUS STATE; CARBON NANOTUBES; COMPARATIVE EVALUATIONS; HETEROJUNCTIONS; INTERFACES; LAYERS; PHOTOVOLTAIC EFFECT; SILICON; SILICON OXIDES; SUBSTRATES; THIN FILMS; TITANIUM