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Title: Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Ge layer grown on Si(100) at the low temperature of ∼100 °C by molecular beam epitaxy is studied using scanning tunneling microscopy and Raman spectroscopy. It is found that crystalline and pseudomorphic to the Si substrate Ge islands are formed at the initial growth stage. The islands acquire the base size of 1.2–2.6 nm and they form arrays with the super-high density of (5–8) × 10{sup 12} cm{sup −2} at 1–2 nm Ge coverages. Such a density is at least 10 times higher than that of Ge “hut” clusters grown via the Stranski-Krastanov growth mode. It is shown that areas between the crystalline Ge islands are filled with amorphous Ge, which is suggested to create potential barrier for holes localized within the islands. As a result, crystalline Ge quantum dots appear being isolated from each other.
Authors:
;  [1] ;  [2] ;  [1]
  1. A.V. Rzhanov Institute of Semiconductor Physics, Lavrentyev Avenue 13, Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22273621
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL STRUCTURE; DENSITY; GERMANIUM; HOLES; MOLECULAR BEAM EPITAXY; POTENTIALS; QUANTUM DOTS; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE