Temperature dependent Raman scattering studies of three dimensional topological insulators Bi{sub 2}Se{sub 3}
- Department of Physics, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931 (United States)
We investigate the temperature dependent (83 K≤T≤523 K) frequency shift of 2A{sub g}{sup 1} and 1E{sub g}{sup 2} phonon modes in the three dimensional topological insulator Bi{sub 2}Se{sub 3}, using Raman spectroscopy. The high quality single crystals of Bi{sub 2}Se{sub 3} were grown using a modified Bridgman technique and characterized by Laue diffraction and high resolution transmission electron microscopy. A significant broadening in the line shape and red-shift in the frequencies were observed with increase in temperature. Polarized Raman scattering measurement shows a strong polarization effect of A{sub g}{sup 1} and A{sub g}{sup 2} phonon modes which confirms the good quality single crystals of Bi{sub 2}Se{sub 3}. Temperature co-efficient for A{sub 1g}{sup 1}, E{sub g}{sup 2}, and A{sub 1g}{sup 2} modes was estimated to be −1.44 × 10{sup −2}, −1.94 × 10{sup −2}, and −1.95 × 10{sup −2} cm{sup −1}∕K, respectively. Our results shed light on anharmonic properties of Bi{sub 2}Se{sub 3}.
- OSTI ID:
- 22273466
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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