Neutron irradiation effects on metal-gallium nitride contacts
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Departments of Electrical and Computer Engineering and Materials Science and Engineering University of California, Santa Barbara, California 93106 (United States)
We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15} n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15} n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16} n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.
- OSTI ID:
- 22271153
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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