Electric field geometries dominate quantum transport coupling in silicon nanoring
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)
Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov–Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47 K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ΔB = 0.178 T was estimated for a ring radius of 86 nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.
- OSTI ID:
- 22271111
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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