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Title: 100 MeV O{sup 7+} irradiation induced red shift in the band gaps of 3 wt% 'Li' doped Nb{sub 2}O{sub 5} thin film

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4872796· OSTI ID:22271054
 [1];  [2]; ;  [3];  [4];  [5]
  1. Department of Physics, Presidency College, Chennai - 600005 (India)
  2. Center for Condensed Matter Sciences, National Taiwan University, Taipei - 10617, Taiwan (China)
  3. Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai - 600025 (India)
  4. Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)
  5. Interuniversity Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India)

Nb{sub 2}O{sub 5}:Li (3 wt%) thin film of thickness 353 nm spray deposited onto ITO coated glass substrate at 350 °C is irradiated with 100 MeV O{sup 7+} ion at a fluence of 5×10{sup 12} ions/cm{sup 2}. X-ray diffraction shows that the pristine and irradiated films are polycrystalline with a tetragonal phase. Raman peaks suppressed upon irradiation imply large surface degradation which is also seen as a decrement in transparency in visible region to one half of the pristine film. Large red shift is observed in direct and indirect band gaps upon irradiation. Hall effect reveals slight increase in carrier concentration due to irradiation induced defects.

OSTI ID:
22271054
Journal Information:
AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English