Microwave properties of RF- sputtered ZnFe{sub 2}O{sub 4} thin films

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872834· OSTI ID:22269213

Kulkarni, A. R.; Venkataramani, N. ^[1]; Sahu, B. N.; Prasad, Shiva ^[2]

---

1. Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai-400076 (India)
2. Department of Physics, IIT Bombay, Mumbai-400076 (India)

In this work, RF- magnetron sputtering technique has been employed to deposit nanocrystalline ZnFe{sub 2}O{sub 4} thin films at room temperature. The as grown films were ex-situ annealed in air for 2 h at temperatures from 150°C to 650°C. X-ray diffraction, vibrating sample magnetometer and ferromagnetic resonance were used to analyze the phase formation, magnetic properties and microwave properties respectively. From the hysteresis loops and ferromagnetic resonance spectra taken at room temperature, a systematic study on the effect of O{sub 2} plasma on microwave properties with respect to processing temperature has been carried out.

• OSTI ID: 22269213
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTALS
DEPOSITS
FERROMAGNETIC RESONANCE
HYSTERESIS
MAGNETIC PROPERTIES
MAGNETRONS
NANOSTRUCTURES
PLASMA
SPECTRA
SPUTTERING
THIN FILMS
VIBRATING SAMPLE MAGNETOMETERS
X-RAY DIFFRACTION