skip to main content

Title: Microwave properties of RF- sputtered ZnFe{sub 2}O{sub 4} thin films

In this work, RF- magnetron sputtering technique has been employed to deposit nanocrystalline ZnFe{sub 2}O{sub 4} thin films at room temperature. The as grown films were ex-situ annealed in air for 2 h at temperatures from 150°C to 650°C. X-ray diffraction, vibrating sample magnetometer and ferromagnetic resonance were used to analyze the phase formation, magnetic properties and microwave properties respectively. From the hysteresis loops and ferromagnetic resonance spectra taken at room temperature, a systematic study on the effect of O{sub 2} plasma on microwave properties with respect to processing temperature has been carried out.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai-400076 (India)
  2. Department of Physics, IIT Bombay, Mumbai-400076 (India)
Publication Date:
OSTI Identifier:
22269213
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CRYSTALS; DEPOSITS; FERROMAGNETIC RESONANCE; HYSTERESIS; MAGNETIC PROPERTIES; MAGNETRONS; NANOSTRUCTURES; PLASMA; SPECTRA; SPUTTERING; THIN FILMS; VIBRATING SAMPLE MAGNETOMETERS; X-RAY DIFFRACTION