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Title: Scaled ZrO{sub 2} dielectrics for In{sub 0.53}Ga{sub 0.47}As gate stacks with low interface trap densities

ZrO{sub 2} dielectrics were grown on n-In{sub 0.53}Ga{sub 0.47}As channels by atomic layer deposition, after employing an in-situ cyclic nitrogen plasma/trimethylaluminum surface cleaning procedure. By scaling the ZrO{sub 2} thickness, accumulation capacitance densities of 3.5 μF/cm{sup 2} at 1 MHz are achieved. The midgap interface trap density is estimated to be in the 10{sup 12} cm{sup −2} eV{sup −1} range. Using x-ray photoelectron spectroscopy, it was shown that the interface contained the oxides of In, Ga, and Al, but no As-oxides or As-As bonds within the detection limit. The results allow for insights into the effective passivation of these interfaces.
Authors:
; ; ;  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Publication Date:
OSTI Identifier:
22269170
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; CAPACITANCE; DIELECTRIC MATERIALS; GALLIUM; INDIUM; NITROGEN; PASSIVATION; SURFACE CLEANING; THICKNESS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM OXIDES