Scaled ZrO{sub 2} dielectrics for In{sub 0.53}Ga{sub 0.47}As gate stacks with low interface trap densities

Journal Article · Mon May 05 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4875977· OSTI ID:22269170

Chobpattana, Varistha; Mates, Thomas E.; Zhang, Jack Y.; Stemmer, Susanne ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

ZrO{sub 2} dielectrics were grown on n-In{sub 0.53}Ga{sub 0.47}As channels by atomic layer deposition, after employing an in-situ cyclic nitrogen plasma/trimethylaluminum surface cleaning procedure. By scaling the ZrO{sub 2} thickness, accumulation capacitance densities of 3.5 μF/cm{sup 2} at 1 MHz are achieved. The midgap interface trap density is estimated to be in the 10{sup 12} cm{sup −2} eV{sup −1} range. Using x-ray photoelectron spectroscopy, it was shown that the interface contained the oxides of In, Ga, and Al, but no As-oxides or As-As bonds within the detection limit. The results allow for insights into the effective passivation of these interfaces.

• OSTI ID: 22269170
• Journal Information: Applied Physics Letters, Vol. 104, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
CAPACITANCE
DIELECTRIC MATERIALS
GALLIUM
INDIUM
NITROGEN
PASSIVATION
SURFACE CLEANING
THICKNESS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZIRCONIUM OXIDES