On the origin of the low temperatures resistivity minimum in Cr thin films

Journal Article · Sat Dec 28 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4846757· OSTI ID:22267795

Osquiguil, E.; Tosi, L.; Kaul, E. E.; Balseiro, C. A. ^[1]

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1. Centro Atómico Bariloche and Instituto Balseiro, Comisión Nacional de Energía Atómica, 8400 Bariloche (Argentina)

We present measurements of the electrical resistivity and Hall coefficient, ρ and R{sub H}, in Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T and applied magnetic field H. The results show a low temperature minimum in ρ(T), which is thickness dependent. From 40 K to 2 K, the Hall coefficient is a monotonous increasing function as T is reduced with no particular signature at the temperature T{sub min} where the minimum develops. We explain the resistivity minimum assuming an imperfect nesting of the Fermi surface leading to small electron and hole pockets. We introduce a phenomenological model which supports this simple physical picture.

• OSTI ID: 22267795
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
FERMI LEVEL
HIGH ROOMS
HOLES
MAGNESIUM OXIDES
MAGNETIC FIELDS
SUBSTRATES
TEMPERATURE DEPENDENCE
THICKNESS
THIN FILMS