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Title: On the origin of the low temperatures resistivity minimum in Cr thin films

We present measurements of the electrical resistivity and Hall coefficient, ρ and R{sub H}, in Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T and applied magnetic field H. The results show a low temperature minimum in ρ(T), which is thickness dependent. From 40 K to 2 K, the Hall coefficient is a monotonous increasing function as T is reduced with no particular signature at the temperature T{sub min} where the minimum develops. We explain the resistivity minimum assuming an imperfect nesting of the Fermi surface leading to small electron and hole pockets. We introduce a phenomenological model which supports this simple physical picture.
Authors:
; ; ;  [1]
  1. Centro Atómico Bariloche and Instituto Balseiro, Comisión Nacional de Energía Atómica, 8400 Bariloche (Argentina)
Publication Date:
OSTI Identifier:
22267795
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; FERMI LEVEL; HIGH ROOMS; HOLES; MAGNESIUM OXIDES; MAGNETIC FIELDS; SUBSTRATES; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS