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Title: Critical factor for epitaxial growth of cobalt-doped BaFe{sub 2}As{sub 2} films by pulsed laser deposition

We heteroepitaxially grew cobalt-doped BaFe{sub 2}As{sub 2} films on (La,Sr)(Al,Ta)O{sub 3} single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm{sup 2} irrespective of the laser wavelength.
Authors:
;  [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [2] ;  [2]
  1. Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)
  2. (Japan)
  3. Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)
Publication Date:
OSTI Identifier:
22267730
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT; CRITICAL CURRENT; DOPED MATERIALS; ENERGY BEAM DEPOSITION; LASER RADIATION; MONOCRYSTALS; PULSED IRRADIATION; PULSES; THIN FILMS; WAVELENGTHS; X-RAY DIFFRACTION