Critical factor for epitaxial growth of cobalt-doped BaFe{sub 2}As{sub 2} films by pulsed laser deposition

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4874609· OSTI ID:22267730

Hiramatsu, Hidenori; Kamiya, Toshio ^[1]; Sato, Hikaru ^[1]; Katase, Takayoshi ^[2]; Hosono, Hideo ^[1]

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1. Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)
2. Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

We heteroepitaxially grew cobalt-doped BaFe{sub 2}As{sub 2} films on (La,Sr)(Al,Ta)O{sub 3} single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm{sup 2} irrespective of the laser wavelength.

• OSTI ID: 22267730
• Journal Information: Applied Physics Letters, Vol. 104, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT
CRITICAL CURRENT
DOPED MATERIALS
ENERGY BEAM DEPOSITION
LASER RADIATION
MONOCRYSTALS
PULSED IRRADIATION
PULSES
THIN FILMS
WAVELENGTHS
X-RAY DIFFRACTION