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Title: Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.
Authors:
 [1] ; ; ; ;  [2] ;  [3]
  1. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)
  2. Department of Electrical- and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)
  3. Aries Research Group, 1-25-11 Fujizuka, Kohoku-ku, Yokohama 222-0012 (Japan)
Publication Date:
OSTI Identifier:
22266052
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1585; Journal Issue: 1; Conference: IRAGO conference 2013, Aichi (Japan), 24-25 Oct 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; COMPUTERIZED SIMULATION; DEPOSITS; FILMS; NITROGEN; ORGANOMETALLIC COMPOUNDS; PLASMA SURFACE WAVES; PRECURSOR; REFRACTIVE INDEX; SILICON NITRIDES; X-RAY PHOTOELECTRON SPECTROSCOPY