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Title: Low energy electron beam irradiation effect on optical properties of nanopillar MQW InGaN/GaN structures

The low energy electron beam irradiation (LEEBI) effect on optical properties of planar and nanopillar InGaN/GaN muliple quantum well light emitting structures was studied by the cathodoluminescence (CL) method. On the planar structures LEEBI leads to a formation of new InGaN-related emission bands red shifted in comparison with initial one at small irradiation doses and blue shifted at doses higher than 0.5 C/cm{sup 2}. It was observed that after dry etching used for the nanopillar formation the main InGaN-related emission line moves from 2.92 to 2.98 eV that can be explained by a strain relaxation in the quantum wells. The optical properties of nanopilars start to change under LEEBI at a dose of about one order of magnitude lower than that for planar structures. At high irradiation doses the behavior of both structures under LEEBI is similar. The results obtained were explained by the formation and reconstruction of quantum dots inside the quantum wells due to a point defect generation and redistribution stimulated by the electron beam irradiation.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. Institute of Microelectronics Technology RAS, 142432, Chernogolovka (Russian Federation)
  2. Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5 (Russian Federation)
  3. School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Chonju 561-756 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22263699
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CATHODOLUMINESCENCE; ELECTRON BEAMS; ETCHING; GALLIUM NITRIDES; IRRADIATION; OPTICAL PROPERTIES; POINT DEFECTS; QUANTUM DOTS; QUANTUM WELLS; RADIATION DOSES; RED SHIFT; RELAXATION