First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal
Journal Article
·
· AIP Conference Proceedings
- Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)
We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.
- OSTI ID:
- 22263693
- Journal Information:
- AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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