skip to main content

Title: First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal

We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.
Authors:
; ; ;  [1]
  1. Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)
Publication Date:
OSTI Identifier:
22263693
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIC; BINDING ENERGY; CRYSTALS; DEFECTS; PEAKS; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY