Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors
- Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.
- OSTI ID:
- 22262638
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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