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Title: Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.
Authors:
; ;  [1] ;  [1] ;  [2] ;  [2] ; ; ;  [3] ;  [3] ;  [2]
  1. Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
  2. (China)
  3. Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
Publication Date:
OSTI Identifier:
22262638
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CONDUCTIVITY; GALLIUM; INDIUM; MEMORY DEVICES; THIN FILMS; TRANSISTORS; VACANCIES; ZINC OXIDES