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Title: Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.
Authors:
;  [1] ;  [2] ; ; ; ;  [3] ;  [4]
  1. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
  2. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia)
  3. Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany)
  4. NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)
Publication Date:
OSTI Identifier:
22261906
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; BORON; ELECTRIC POTENTIAL; GALLIUM PHOSPHIDES; LAYERS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY; SUBSTRATES; VAPOR PHASE EPITAXY