Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848278· OSTI ID:22261906

Hossain, Nadir; Sweeney, Stephen ^[1]; Hosea, Jeff ^[2]; Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang ^[3]; Kunert, Bernerdette ^[4]

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1. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
2. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia)
3. Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany)
4. NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)

We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

• OSTI ID: 22261906
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
BORON
ELECTRIC POTENTIAL
GALLIUM PHOSPHIDES
LAYERS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
SUBSTRATES
VAPOR PHASE EPITAXY