Relaxation and recombination processes in Ge/SiGe multiple quantum wells
Journal Article
·
· AIP Conference Proceedings
- L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy)
- Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)
The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at Γ is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.
- OSTI ID:
- 22261902
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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