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Title: Relaxation and recombination processes in Ge/SiGe multiple quantum wells

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at Γ is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.
Authors:
; ; ;  [1] ; ;  [2] ; ; ; ; ; ;  [3]
  1. L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy)
  2. L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy)
  3. Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)
Publication Date:
OSTI Identifier:
22261902
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONS; GERMANIUM SILICIDES; QUANTUM WELLS; RECOMBINATION; RELAXATION; SPECTROSCOPY