Ballistic thermal point contacts made of GaAs nanopillars

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848376· OSTI ID:22261802

Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W. ^[1]

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1. Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

• OSTI ID: 22261802
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC CONTACTS
GALLIUM ARSENIDES
NANOSTRUCTURES
PHONONS