Carriers mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848306· OSTI ID:22261748

Khutsishvili, Elza; Khomasuridze, David; Gabrichidze, Leonti ^[1]; Kvirkvelia, Bella; Kekelidze, David; Guguchia, Zurab ^[2]; Aliyev, Vugar ^[3]; Kekelidze, Nodar ^[1]

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1. Ferdinand Tavadze Institute of Metallurgy and Materials Science,15 Kazbegi str, 0160 Tbilisi (Georgia)
2. Iv.Javakhishvili Tbilisi State University, 1 Chavchavadze Ave., 0179 Tbilisi (Georgia)
3. Institute of Physics of National Academy of Sciences, 33 H. Cavid Avenue, 1143 Baku (Azerbaijan)

We have studied the low temperature charge carriers mobility in bulk single crystals of InAs- and InP- rich InAs-InP solid solutions irradiated with maximum integral flux 2⋅10{sup 18} n/cm{sup 2} of fast neutrons. Influence of minor component small addition in InAs-InP solid solutions has been revealed. There are also presented data of radiation defects thermal stability.

• OSTI ID: 22261748
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
DEFECTS
FAST NEUTRONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
IRRADIATION
MONOCRYSTALS
SOLID SOLUTIONS