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Title: In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, The University of Texas at Dallas Richardson, Texas 75080 (United States)
  2. Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22258732
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CHEMICAL STATE; CONCENTRATION RATIO; DEPOSITION; ELECTRON BEAMS; EVAPORATION; FORMATION HEAT; HYDROFLUORIC ACID; INDIUM; INDIUM PHOSPHIDES; OXIDES; SCATTERING; X-RAY PHOTOELECTRON SPECTROSCOPY