Thermodynamic and kinetic control of the lateral Si wire growth
- Department of Physics and Astronomy, The University of Western Ontario, 1151 Richmond St., London, Ontario N6A 3K7 (Canada)
Reproducible lateral Si wire growth has been realized on the Si (100) surface. In this paper, we present experimental evidence showing the unique role that carbon plays in initiating lateral growth of Si wires on a Si (100) substrate. Once initiated in the presence of ≈5 ML of C, lateral growth can be achieved in the range of temperatures, T = 450–650 °C, and further controlled by the interplay of the flux of incoming Si atoms with the size and areal density of Au droplets. Critical thermodynamic and kinetic aspects of the growth are discussed in detail.
- OSTI ID:
- 22258610
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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