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Title: Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.
Authors:
;  [1]
  1. Nanoscience Center, Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland)
Publication Date:
OSTI Identifier:
22258600
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPUTERIZED SIMULATION; NICKEL SULFIDES; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTORS; TANTALUM; TANTALUM NITRIDES; TEMPERATURE DEPENDENCE; TRANSITION TEMPERATURE; TUNNEL EFFECT