Highly polarized photoluminescence and its dynamics in semipolar (202{sup ¯}1{sup ¯}) InGaN/GaN quantum well

Journal Article · Mon Mar 17 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869459· OSTI ID:22257818

Ivanov, R. ^[1]; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S. ^[2]

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1. KTH Royal Institute of Technology, Department of Materials and Nanophysics, Electrum 229, 16440 Kista (Sweden)
2. Materials Department, University of California, Santa Barbara, California 93106 (United States)

Very high polarization degree of 0.98, considerably larger than theoretical predictions, has been measured in (202{sup ¯}1{sup ¯}) In{sub 0.24}Ga{sub 0.76}N/GaN quantum well by low temperature photoluminescence. With increasing temperature, the polarization degree decreases due to thermal population of the excited valence band level. This effect suggests an accurate method to determine the interlevel energy, which, for the studied well, is 32 meV. Time-resolved photoluminescence measurements set radiative recombination times between 2 and 12 ns for temperatures from 3 to 300 K. Nonradiative recombination was found to be slow, over 2 ns at 300 K, taking place via traps with activation energy of 0.19 eV.

• OSTI ID: 22257818
• Journal Information: Applied Physics Letters, Vol. 104, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
GALLIUM NITRIDES
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM WELLS
RECOMBINATION
TIME RESOLUTION