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Title: Highly polarized photoluminescence and its dynamics in semipolar (202{sup ¯}1{sup ¯}) InGaN/GaN quantum well

Very high polarization degree of 0.98, considerably larger than theoretical predictions, has been measured in (202{sup ¯}1{sup ¯}) In{sub 0.24}Ga{sub 0.76}N/GaN quantum well by low temperature photoluminescence. With increasing temperature, the polarization degree decreases due to thermal population of the excited valence band level. This effect suggests an accurate method to determine the interlevel energy, which, for the studied well, is 32 meV. Time-resolved photoluminescence measurements set radiative recombination times between 2 and 12 ns for temperatures from 3 to 300 K. Nonradiative recombination was found to be slow, over 2 ns at 300 K, taking place via traps with activation energy of 0.19 eV.
Authors:
;  [1] ; ; ; ;  [2]
  1. KTH Royal Institute of Technology, Department of Materials and Nanophysics, Electrum 229, 16440 Kista (Sweden)
  2. Materials Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22257818
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; GALLIUM NITRIDES; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM WELLS; RECOMBINATION; TIME RESOLUTION