Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)
- Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)
The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with minority carrier electrons can result in increased photodiode quantum efficiency, R{sub o}A, and detectivity. Therefore, Be-doped InAs/InAsSb superlattices were investigated to determine the p-type InAs/InAsSb superlattice material transport properties essential to developing high quality photodiode absorber materials. Hall measurements performed at 10 K revealed that the superlattice converted to p-type with Be-doping of 3 × 10{sup 16} cm{sup −3} and the hole mobility reached 24 400 cm{sup 2}/Vs. Photoresponse measurements at 10 K confirmed the 175 meV bandgap and material optical quality.
- OSTI ID:
- 22257140
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications