skip to main content

Title: Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices

The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with minority carrier electrons can result in increased photodiode quantum efficiency, R{sub o}A, and detectivity. Therefore, Be-doped InAs/InAsSb superlattices were investigated to determine the p-type InAs/InAsSb superlattice material transport properties essential to developing high quality photodiode absorber materials. Hall measurements performed at 10 K revealed that the superlattice converted to p-type with Be-doping of 3 × 10{sup 16} cm{sup −3} and the hole mobility reached 24 400 cm{sup 2}/Vs. Photoresponse measurements at 10 K confirmed the 175 meV bandgap and material optical quality.
Authors:
; ; ;  [1] ;  [2]
  1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)
  2. Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)
Publication Date:
OSTI Identifier:
22257140
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BERYLLIUM; DOPED MATERIALS; ELECTRONS; HOLE MOBILITY; INDIUM ARSENIDES; QUANTUM EFFICIENCY; SUPERLATTICES