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Title: Generation kinetics of boron-oxygen complexes in p-type compensated c-Si

Kinetics characteristics of boron-oxygen complexes responsible for light-induced degradation in p-type compensated c-Si have been investigated. The generation of B-O complexes is well fitted by a fast-forming process and a slow-forming one. Activation energies of complexes generation during the fast-forming process are determined to be 0.29 and 0.24‚ÄČeV in compensated and non-compensated c-Si, respectively, and those during the slow-forming process are the same, about 0.44‚ÄČeV. Moreover, it is found that the pre-exponential factors of complexes generation in compensated c-Si is proportional to the square of the net doping concentration, which suggests that the latent centers should exist.
Authors:
; ; ; ;  [1]
  1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22257046
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; BORON; DOPED MATERIALS; OXYGEN COMPLEXES; REACTION KINETICS; SILICON