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Title: Generation kinetics of boron-oxygen complexes in p-type compensated c-Si

Abstract

Kinetics characteristics of boron-oxygen complexes responsible for light-induced degradation in p-type compensated c-Si have been investigated. The generation of B-O complexes is well fitted by a fast-forming process and a slow-forming one. Activation energies of complexes generation during the fast-forming process are determined to be 0.29 and 0.24 eV in compensated and non-compensated c-Si, respectively, and those during the slow-forming process are the same, about 0.44 eV. Moreover, it is found that the pre-exponential factors of complexes generation in compensated c-Si is proportional to the square of the net doping concentration, which suggests that the latent centers should exist.

Authors:
; ; ; ;  [1]
  1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22257046
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; BORON; DOPED MATERIALS; OXYGEN COMPLEXES; REACTION KINETICS; SILICON

Citation Formats

Wu, Yichao, Yu, Xuegong, Chen, Peng, Chen, Xianzi, and Yang, Deren. Generation kinetics of boron-oxygen complexes in p-type compensated c-Si. United States: N. p., 2014. Web. doi:10.1063/1.4868635.
Wu, Yichao, Yu, Xuegong, Chen, Peng, Chen, Xianzi, & Yang, Deren. Generation kinetics of boron-oxygen complexes in p-type compensated c-Si. United States. https://doi.org/10.1063/1.4868635
Wu, Yichao, Yu, Xuegong, Chen, Peng, Chen, Xianzi, and Yang, Deren. 2014. "Generation kinetics of boron-oxygen complexes in p-type compensated c-Si". United States. https://doi.org/10.1063/1.4868635.
@article{osti_22257046,
title = {Generation kinetics of boron-oxygen complexes in p-type compensated c-Si},
author = {Wu, Yichao and Yu, Xuegong and Chen, Peng and Chen, Xianzi and Yang, Deren},
abstractNote = {Kinetics characteristics of boron-oxygen complexes responsible for light-induced degradation in p-type compensated c-Si have been investigated. The generation of B-O complexes is well fitted by a fast-forming process and a slow-forming one. Activation energies of complexes generation during the fast-forming process are determined to be 0.29 and 0.24 eV in compensated and non-compensated c-Si, respectively, and those during the slow-forming process are the same, about 0.44 eV. Moreover, it is found that the pre-exponential factors of complexes generation in compensated c-Si is proportional to the square of the net doping concentration, which suggests that the latent centers should exist.},
doi = {10.1063/1.4868635},
url = {https://www.osti.gov/biblio/22257046}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 104,
place = {United States},
year = {Mon Mar 10 00:00:00 EDT 2014},
month = {Mon Mar 10 00:00:00 EDT 2014}
}