Generation kinetics of boron-oxygen complexes in p-type compensated c-Si

Journal Article · Mon Mar 10 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868635· OSTI ID:22257046

Wu, Yichao; Yu, Xuegong; Chen, Peng; Chen, Xianzi; Yang, Deren ^[1]

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1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

Kinetics characteristics of boron-oxygen complexes responsible for light-induced degradation in p-type compensated c-Si have been investigated. The generation of B-O complexes is well fitted by a fast-forming process and a slow-forming one. Activation energies of complexes generation during the fast-forming process are determined to be 0.29 and 0.24 eV in compensated and non-compensated c-Si, respectively, and those during the slow-forming process are the same, about 0.44 eV. Moreover, it is found that the pre-exponential factors of complexes generation in compensated c-Si is proportional to the square of the net doping concentration, which suggests that the latent centers should exist.

• OSTI ID: 22257046
• Journal Information: Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
BORON
DOPED MATERIALS
OXYGEN COMPLEXES
REACTION KINETICS
SILICON