Interaction of oxygen with samarium on Al{sub 2}O{sub 3} thin film grown on Ni{sub 3}Al(111)
- National Synchrotron Radiation Laboratory and Collaborative Innovation Center of Suzhou Nano Science and Technology, University of Science and Technology of China, Hefei 230029 (China)
The interaction between oxygen and samarium (Sm) on the well-ordered thin Al{sub 2}O{sub 3} film grown on Ni{sub 3}Al(111) has been investigated by X-ray photoelectron spectroscopy and synchrotron radiation photoemission spectroscopy. At Sm coverage higher than one monolayer, exposure of oxygen to the Sm films at room temperature leads to the formation of both samarium peroxide (O{sub 2}{sup 2−}) states and regular samarium oxide (O{sup 2−}) states. By contrast, when exposing O{sub 2} to Sm film less than one monolayer on Al{sub 2}O{sub 3}, no O{sub 2}{sup 2−} can be observed. Upon heating to higher temperatures, these metastable O{sub 2}{sup 2−} states dissociate, supplying active O atoms which can diffuse through the Al{sub 2}O{sub 3} thin film to further oxidize the underlying Ni{sub 3}Al(111) substrate, leading to the significant increase of the Al{sub 2}O{sub 3} thin film thickness. Therefore, it can be concluded that Sm, presumably in its peroxide form, acts as a catalyst for the further oxidation of the Ni{sub 3}Al substrate by supplying the active oxygen species at elevated temperatures.
- OSTI ID:
- 22255003
- Journal Information:
- Journal of Chemical Physics, Vol. 140, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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