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Title: Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.4873324· OSTI ID:22254900
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  1. Pulsed High Power Microwave Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, M.P. (India)

Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses of 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.

OSTI ID:
22254900
Journal Information:
Review of Scientific Instruments, Vol. 85, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
Country of Publication:
United States
Language:
English