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Title: Reduction of leakage current in In{sub 0.53}Ga{sub 0.47}As channel metal-oxide-semiconductor field-effect-transistors using AlAs{sub 0.56}Sb{sub 0.44} confinement layers

We compare the DC characteristics of planar In{sub 0.53}Ga{sub 0.47}As channel MOSFETs using AlAs{sub 0.56}Sb{sub 0.44} barriers to similar MOSFETs using In{sub 0.52}Al{sub 0.48}As barriers. AlAs{sub 0.56}Sb{sub 0.44}, with ∼1.0 eV conduction-band offset to In{sub 0.53}Ga{sub 0.47}As, improves electron confinement within the channel. At gate lengths below 100 nm and V{sub DS} = 0.5 V, the MOSFETs with AlAs{sub 0.56}Sb{sub 0.44} barriers show steeper subthreshold swing (SS) and reduced drain-source leakage current. We attribute the greater leakage observed with the In{sub 0.52}Al{sub 0.48}As barrier to thermionic emission from the N + In{sub 0.53}Ga{sub 0.47}As source over the In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterointerface. A 56 nm gate length device with the AlAs{sub 0.56}Sb{sub 0.44} barrier exhibits 1.96 mS/μm peak transconductance and SS = 134 mV/dec at V{sub DS} = 0.5 V.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [1] ;  [3]
  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  2. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22254060
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; LAYERS; LEAKAGE CURRENT; LENGTH; MOSFET; OXIDES; SEMICONDUCTOR MATERIALS; THERMIONIC EMISSION