Reduction of leakage current in In{sub 0.53}Ga{sub 0.47}As channel metal-oxide-semiconductor field-effect-transistors using AlAs{sub 0.56}Sb{sub 0.44} confinement layers
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
- Materials Department, University of California, Santa Barbara, California 93106 (United States)
We compare the DC characteristics of planar In{sub 0.53}Ga{sub 0.47}As channel MOSFETs using AlAs{sub 0.56}Sb{sub 0.44} barriers to similar MOSFETs using In{sub 0.52}Al{sub 0.48}As barriers. AlAs{sub 0.56}Sb{sub 0.44}, with ∼1.0 eV conduction-band offset to In{sub 0.53}Ga{sub 0.47}As, improves electron confinement within the channel. At gate lengths below 100 nm and V{sub DS} = 0.5 V, the MOSFETs with AlAs{sub 0.56}Sb{sub 0.44} barriers show steeper subthreshold swing (SS) and reduced drain-source leakage current. We attribute the greater leakage observed with the In{sub 0.52}Al{sub 0.48}As barrier to thermionic emission from the N + In{sub 0.53}Ga{sub 0.47}As source over the In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterointerface. A 56 nm gate length device with the AlAs{sub 0.56}Sb{sub 0.44} barrier exhibits 1.96 mS/μm peak transconductance and SS = 134 mV/dec at V{sub DS} = 0.5 V.
- OSTI ID:
- 22254060
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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