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Title: Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator

A systematic investigation has been undertaken, in which thin polymer buffer layers with different ester content have been spin-coated onto a flash-evaporated, cross-linked diacrylate gate-insulator to form bottom-gate, top-contact organic thin-film transistors. The highest device mobilities, ∼0.65 cm{sup 2}/V s and ∼1.00 cm{sup 2}/V s for pentacene and dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b]thiophene (DNTT), respectively, were only observed for a combination of large-grain (∼1–2 μm) semiconductor morphology coupled with a non-polar dielectric surface. No correlation was found between semiconductor grain size and dielectric surface chemistry. The threshold voltage of pentacene devices shifted from −10 V to −25 V with decreasing surface ester content, but remained close to 0 V for DNTT.
Authors:
; ;  [1] ; ; ;  [2] ;  [3]
  1. Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom)
  2. School of Chemistry, University of Manchester, Manchester M13 9PL (United Kingdom)
  3. School of Electronic Engineering, Bangor University, Bangor LL57 1UT (United Kingdom)
Publication Date:
OSTI Identifier:
22253905
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACRYLATES; ADMINISTRATIVE PROCEDURES; DIELECTRIC MATERIALS; EQUIPMENT; ESTERS; GRAIN SIZE; MOBILITY; MORPHOLOGY; PENTACENE; PERFORMANCE; POLYCYCLIC SULFUR HETEROCYCLES; POLYMERS; SEMICONDUCTOR MATERIALS; SPIN; SURFACES; THIN FILMS; THIOPHENE; TRANSISTORS