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Title: Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150 °C) GaN. Reducing T{sub g}, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to activemore » layer growth can mitigate such non-radiative channels.« less
Authors:
 [1] ;  [2] ; ;  [2] ;  [3] ;  [4]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  3. (United States)
  4. Materials Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22253898
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; APPROXIMATIONS; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; DENSITY; DIFFUSION BARRIERS; GALLIUM NITRIDES; LIGHT EMITTING DIODES; ORGANOMETALLIC COMPOUNDS; QUANTUM WELLS; SPECTRA; THIN FILMS; VENTILATION BARRIERS