A micrometer-size movable light emitting area in a resonant tunneling light emitting diode
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
- CNISM-Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)
We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.
- OSTI ID:
- 22253829
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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