Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4850676· OSTI ID:22253751

Jaffrès, H.; Deranlot, C.; George, J. -M. ^[1]; Baili, G.; Dolfi, D. ^[2]; Alouini, M. ^[3]; Sagnes, I. ^[4]; Garnache, A. ^[5]

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1. Unité Mixte de Physique CNRS-Thales and Université Paris Sud 11, 1 av. Fresnel, 91767 Palaiseau (France)
2. Thales Research and Technology, 1 av. Fresnel, 91767 Palaiseau (France)
3. Institut de Physique de Rennes, 263 Avenue Général Leclerc, 35042 Rennes (France)
4. Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France)
5. Institut d'électronique du Sud CNRS UMR5214, Université Montpellier 2 Place Eugene Bataillon, 34095 Montpellier (France)

We fabricated and characterized an optically pumped (100)-oriented InGaAs/GaAsP multiple quantum well Vertical External Cavity Surface Emitting Laser (VECSEL). The structure is designed to allow the integration of a Metal-Tunnel-Junction ferromagnetic spin-injector for future electrical injection. We report here the control at room temperature of the electromagnetic field polarization using optical spin injection in the active medium of the VECSEL. The switching between two highly circular polarization states had been demonstrated using an M-shaped extended cavity in multi-modes lasing. This result witnesses an efficient spin-injection in the active medium of the LASER.

• OSTI ID: 22253751
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
POLARIZATION
QUANTUM WELLS
SPIN
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
VISIBLE RADIATION