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Title: Metal-semiconductor hybrid thin films in field-effect transistors

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.
Authors:
;  [1] ;  [1] ;  [2]
  1. Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
22253695
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; DENSITY; DISTRIBUTION; ELECTRIC FIELDS; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; MOBILITY; OXIDES; SEMICONDUCTOR MATERIALS; THIN FILMS