Highly uniform bipolar resistive switching characteristics in TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} multilayer
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China)
- Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China)
Nanoscale multilayer structure TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} has been fabricated on Pt/Ti/SiO{sub 2}/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2}/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO{sub 2} play a crucial role in the resistive switching phenomenon and the introduced TiO{sub 2}/BaTiO{sub 3} interfaces result in the high uniformity of bipolar resistive switching characteristics.
- OSTI ID:
- 22253210
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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