Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
In this study, structurally uniform single crystalline PbTe nanowires (NWs) were synthesized using a stress-induced growth. Selected-area electron diffraction patterns show that the PbTe NWs were grown along the [100] direction. The electrical conductivity σ of a NW with 142 nm in diameter exhibited a semiconducting behavior at 50–300 K. An enhancement of electrical conductivity σ up to 2383 S m{sup −1} at 300 K is much higher than σ [0.44–1526 S m{sup −1}, Chen et al., Appl. Phys. Lett. 103, p023115, (2013)] in previous studies. The room temperature magnetoresistance of the 142 nm NW was ∼0.8% at B = 2 T, which is considerably higher than that [0.2% at B = 2 T, Ovsyannikov et al., Sol. State Comm. 126, 373, (2003)] of the PbTe bulk reported.
- OSTI ID:
- 22252839
- Journal Information:
- AIP Advances, Vol. 4, Issue 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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