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Title: Room temperature strain rate sensitivity in precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposites

Investigation on the room temperature strain rate sensitivity using depth sensing nanoindentation is carried out on precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposite sintered using pulsed electric current sintering. Using constant load method the strain rate sensitivity values are estimated. Lower strain rate sensitivity of ∼ 3.7 × 10{sup −3} is observed and the limited strain rate sensitivity of these ceramic nanocomposites is explained in terms of cluster model. It is concluded that presence of amorphous Si-C-N(O) clusters are responsible for the limited flowability in these ceramics.
Authors:
;  [1]
  1. Materials Processing Section, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai-600036, India. (India)
Publication Date:
OSTI Identifier:
22251623
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 1; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CERAMICS; CLUSTER MODEL; COMPOSITE MATERIALS; ELECTRIC CURRENTS; HAFNIUM OXIDES; NANOSTRUCTURES; PRECURSOR; SENSITIVITY; SINTERING; STRAIN RATE; TEMPERATURE RANGE 0273-0400 K