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Title: Thermal conductivity of sputtered amorphous Ge films

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4867122· OSTI ID:22251232
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  1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

OSTI ID:
22251232
Journal Information:
AIP Advances, Vol. 4, Issue 2; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English