Theoretical study of intraband optical transitions in conduction band of dot-in-a-well system

Journal Article · Sat Feb 15 00:00:00 EST 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4867099· OSTI ID:22251231

Chaganti, Venkata R.; Apalkov, Vadym ^[1]

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1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30302 USA. (Georgia)

We study numerically absorption optical spectra of n-doped InAs/In{sub 015}Ga{sub 085}As/GaAs quantum dot-in-a-well systems. The absorption spectra are mainly determined by the size of a quantum dot and have weak dependence on the thickness of quantum well and position of the dot in a well. The dot-in-a-well system is sensitive to both in-plane and out-of-plane polarizations of the incident light with much stronger absorption intensities for the in-plane-polarized light. The absorption spectrum of in-plane-polarized light has also a multi-peak structure with two or three peaks of comparable intensities, while the absorption spectrum of out-of-plane polarized light has a single well-pronounced peak.

• OSTI ID: 22251231
• Journal Information: AIP Advances, Vol. 4, Issue 2; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTRA
DOPED MATERIALS
GALLIUM ARSENIDES
INDIUM ARSENIDES
PEAKS
POLARIZATION
QUANTUM DOTS
QUANTUM WELLS
THICKNESS