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Title: Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

Trap states in Al{sub 0.55}Ga{sub 0.45}N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10{sup 13} eV{sup −1}·cm{sup −2}. Al{sub 2}O{sub 3} gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22250848
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DENSITY; ELECTRIC FIELDS; ELECTRON MOBILITY; EMISSION; FREQUENCY DEPENDENCE; GALLIUM NITRIDES; SEMICONDUCTOR MATERIALS; SURFACES; TRANSISTORS; TUNNEL EFFECT