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Title: Control of plasma profile in microwave discharges via inverse-problem approach

In the manufacturing process of semiconductors, plasma processing is an essential technology, and the plasma used in the process is required to be of high density, low temperature, large diameter, and high uniformity. This research focuses on the microwave-excited plasma that meets these needs, and the research target is a spatial profile control. Two novel techniques are introduced to control the uniformity; one is a segmented slot antenna that can change radial distribution of the radiated field during operation, and the other is a hyper simulator that can predict microwave power distribution necessary for a desired radial density profile. The control system including these techniques provides a method of controlling radial profiles of the microwave plasma via inverse-problem approach, and is investigated numerically and experimentally.
Authors:
; ;  [1]
  1. Department of Electrical and Electronic Engineering, Kobe University, Kobe 657-8501 (Japan)
Publication Date:
OSTI Identifier:
22220205
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 12; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ANTENNAS; CONTROL SYSTEMS; DENSITY; HIGH-FREQUENCY DISCHARGES; MICROWAVE RADIATION; PLASMA DENSITY; PLASMA RADIAL PROFILES; SEMICONDUCTOR MATERIALS; SIMULATORS; SPATIAL DISTRIBUTION